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A high breakdown voltage of 350V enables Eudyna GaN HEMTs to operate at 50 Volts with low current consumption for a very high RF power capability. The high impedance of these devices makes broadband amplifier design simpler.
Higher efficiency accompanied by higher output power is increasingly demanded for all applications including Cellular BSTN, WiMAX, SATCOM, Digital Radio, VSAT and Radar systems due to the requirement for higher data
rates and lower power consumption. These industry requirements are more easily realized by using GaN HEMTs.
High breakdown voltage is an essential property not only for Doherty Amplifier but also for next generation higher efficiency Switching Amplifier. Class E, ET*1, and EE&R*2 amplifiers are all made practical with GaN HEMT Technology.
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*1 ET:
Envelope Tracking
*2 EE&R: Envelope Elimination and Restoration |
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Features
• 100W in 0.2cc (500W/cc) , 180W in 1.2cc (150W/cc)
• High Channel Temperature (Tch): Up to 250°C
• Higher Impedance: ~50Ω (Easy to Match)
• High Operating Voltage: 50V
• High Breakdown Voltage: 350V |
• High Power: Up to 180W
• High Efficiency: 60% @Psat
• High Efficiency: 35% @WCDMA Pout (Ave) see Table I
• High Gain: 16dB @2.1GHz
• Excellent suitability with Digital Pre-Distortion System |
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| ES/EGN010MK |
ES/EMC21L1004GN |
ES/EGN21A180IV |
ES/EGN004XM |
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For General purpose
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| Part Number |
Frequency
(GHz) |
P3dB
Typ.
(dBm) |
GL
Typ.
(dB) |
η@P3dB
Typ.
(%) |
lDS (DC)
(mA) |
Rth
Typ.
(°C/W) |
Outline/
PackageCode |
| ES/EGN090MK |
0.9 |
51.0 |
18.0 |
65 |
500 |
1.2 |
MK |
| ES/EGN070MK |
0.9 |
49.5 |
18.0 |
65 |
400 |
1.5 |
| ES/EGN045MK |
2.2 |
47.5 |
12.0 |
60 |
250 |
2.0 |
| ES/EGN030MK |
2.7 |
46.5 |
12.0 |
60 |
200 |
2.5 |
| ES/EGN010MK |
3.5 |
41.0 |
13.0 |
60 |
100 |
4.8 |
| ES/EGN004XM |
2.0 |
36.5 |
19.0 |
55 |
50 |
9.0 |
XM |
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| ES
: Engineering Sample |
For WCDMA BTS application (Table I)
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| Part Number |
Frequency
(GHz) |
P3dB
Typ.
(dBm) |
Pout(Ave)
Typ .
(dBm) |
GL
Typ.
(dB) |
η@Pout
(Ave)
Typ.
(%) |
lM3
Typ.
(dBc) |
lM3with DPD
Typ.
(dBc) |
Rth
Typ.
(°C/W) |
Outline/
PackageCode |
| ES/EGN21A180lV |
2.11~2.17 |
53.0 |
45 |
16 |
32 |
-32 |
-55 |
0.65 |
lV |
| ES/EGN21A090lV |
2.11~2.17 |
50.0 |
42 |
16 |
35 |
-32 |
-55 |
1.2 |
| ES/EGN21A045lV |
2.11~2.17 |
47.0 |
39 |
16 |
35 |
-32 |
-55 |
1.8 |
| ES/EMC21L1004GN |
2.11~2.17 |
40.0 |
22 |
30 |
- |
-45 |
- |
- |
- |
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| Part Number |
Frequency
(GHz) |
P3dB
Typ.
(dBm) |
GL
Typ.
(dB) |
η@P3dB
Typ.
(%) |
IDS(DC)
(A) |
Rth
Typ.
(°C/W) |
Outline/
PackageCode |
ES/EGN18A030MK
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1.8 |
46.5 |
17 |
60 |
200 |
2.5 |
MK |
| ES/EGN21A030MK |
2.1 |
46.5 |
16.5 |
55 |
200 |
2.5 |
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| ES
: Engineering Sample |
For WiMAX BTS application
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|
ES
: Engineering Sample |
