!FLC307XP Fujitsu GaAsFET device
!NOTE:* The data includes bonding wires.
!n: number of wires Gate n=4 (0.3mm length, 25µm Dia Au wire)
!Drain n=4 (0.3mm length, 25µm Dia Au wire)
!Source n=4 (0.3mm length, 25µm Dia Au wire)
!S-PARAMETERS
!V DS = 10V, I DS = 800mA
!FREQUENCY S11 S21 S12 S22
!(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
# MHz S MA R 50
100 .989 -49.0 18.472 153.7 .010 64.9 .383 -164.1
500 .947 -132.8 7.971 107.3 .022 23.7 .555 -167.4
1000 .940 -155.8 4.206 90.6 .023 13.4 .587 -169.5
2000 .940 -168.6 2.080 73.7 .022 9.6 .624 -168.0
3000 .942 -173.5 1.334 61.3 .021 11.2 .665 -166.4
4000 .945 -176.3 .950 50.9 .020 15.5 .709 -165.8
5000 .948 -178.3 .717 41.9 .020 21.8 .750 -165.9
6000 .950 -180.0 .561 34.0 .020 29.3 .785 -166.6
7000 .953 178.6 .451 27.2 .021 36.9 .815 -167.5
8000 .955 177.3 .371 21.4 .022 43.7 .840 -168.6
9000 .956 176.1 .309 16.4 .024 49.5 .861 -169.7
10000 .958 174.9 .262 12.2 .026 54.2 .878 -170.8
11000 .959 173.8 .224 8.8 .029 57.8 .892 -171.9
12000 .960 172.7 .193 6.0 .031 60.5 .904 -172.9