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Copyright (c)2006 Eudyna Devices Inc. All right reserved.

 


The recent spread of broadband internet service makes high-capacity and low-cost information access possible for personal use as well as for small businesses. Wireless internet access systems using millimeter-wave has shared in this service. Eudyna Devices provides key products for RF transceivers in the millimeter-wave frequencies such as power amplifier MMICs and low noise amplifier MMICs. In addition, new device releases that expand upon the existing product base include Low-distortion power amplifier MMICs, upconverter MMICs, and downconverter MMICs. Surface-mount packaged products are in the development stage for ease of customer use.

 

Features

Power Amplifier MMICs for C / X / Ku Band
VF Package
GJ Package
FMM5822X
ES/EMM5832VU
FMM5116X
EMM5206LP

Eudyna Devices provides power amplifier MMICs with output power at 100mW, 500mW, 1W, 3W, and 4W levels for VSAT (Very Small Aperture Terminal) and radio link communication systems. VSAT is a communication system between a hub terminal and many branch terminals using a relay communication satellite. The VSAT system requires mechanically small, low cost, and high performance devices. The radio link system requires high power and low distortion performance for QPSK or QAM modulation requirements Eudyna has full line-up of MMIC products specified from C-band through Ku-band.
> Input and output internally matched
> High gain and high output power
> Small hermetically sealed package
> Built-in power monitor (FMM5017VF / FMM5007VF)
Low-distortion High Output Power Amplifier MMIC (FMM5822X)
> Third-order intermodulation distortion IM3 -41 dBc (Typ.) at Pout = 20.5 dBm S.C.L. ,
f = 17.5~20 GHz, (better IM3 by 10 dB compared with FMM5805X)
> High power and high Gain : P1dB=32.5dBm (typ.) , G1dB=21dB (typ.)
> Suitable to point-to-point communication system

Low Cost Surface Mount High Power Amplifier MMIC (ES/EMM5832VU)
> Hermetic sealed, surface mount type package : VU
> High power, high gain and low distortion : P1dB=31dBm (typ.), G1dB=19dB (typ.),
OIP3=36.5dBm

Up-Converter (FMM5116X) / Down-Converter (FMM5117X)
> Wide frequency range : 20~32 GHz
> Built-in LO doubler and LO amplifier
> Suitable to radio link and V-SAT communication
> High conversion gain : -8dB for up-converter and -10dB for down converter

24 GHz Oscillator MMIC (Microwave Sensor)
> High Output Power : Pout=5dBm @Vdd=4V (Typ.)
> Low Power Consumption : Idd=20mA @Vdd=4V (Typ.)
> Low Phase Noise : Φn=-100dBc/Hz @100kHz offset, fosc=24GHz
> Low Spurious Level : RJ2nd = -40dBc (Typ.)
 
 

C~V Band : Power Amplifier MMIC Specifications (Chip / Packaged)
Ta=+25°C
Part Number Frequency
Range
f
GHz
Drain-Source
Voltage
VDD
(V)
Output Power
at 1dB G.C.P.
P 1dB
dBm (Typ.)
Gain at
1dB G.C.P.
G1dB
dB (Typ.)
Drain Current at
1dBG.C.P.
lDD*1
mA (Typ.)
3rd.Order Intercept
Point
OIP3
dBm (Typ.)
Outline/
Package
Code
Feature/Application
ES/EMM5078X 3.4~8.5 6 26 29 350 35 Chip High Power,
Low Distorlion,
Radio Link
ES/EMM5078ZV 3.4~8.5 36 26 29 350 35 ZV
ES/EMM5077VU* 3.4~5.0 6 31
(f=3.4~4.2GHz) 29.5
(f=4.2~5.0GHz)
25 1200
(f=3.4~4.2GHz) 1250
(f=4.2~5.0GHz)
39.5
(f=3.4~4.2GHz) 38
(f=4.2~5.0GHz)
VU(SMT)
FMM5056X 5.8~7.2 10 34 28 1100 - Chip High Power,
Low Distortion
C-Band VSAT,
Radio Link
FMM5056VF 5.8~7.2 10 34 28 1100 - VF
ES/EMM5074X * 5.8~8.5 6 32
(f=5.8~7.1GHz) 32.5
(f=7.1~8.5GHz)
27 1450 41 Chip
ES/EMM5074VU * 5.9~8.5 6 33 26 1600 40 VU(SMT)
FMM5057X 7.1~8.5 10 34 26 1100 - Chip High Power,
High Gain,
Low Distortion
Radio Link
FMM5057VF 7.1~8.5 10 34 26 1100 - VF
EMM5068X 9.5~13.3 6 33 25 1500 42.5 Chip
EMM5068VU 9.5~13.3 6 33
(f=9.5~11.7GHz)
31
(f=11.7~13.3GHz)
25
(f=9.5~11.7GHz)
23
(f=11.7~13.3GHz)
1500
(f=9.5~11.7GHz)
1400
(f=11.7~13.3GHz)
40 VU(SMT)
FMM5061VF 9.5~13.3 6 33
(f=9.5~11.7GHz)
31
(f=11.7~13.3GHz)
25
(f=9.5~11.7GHz)
23
(f=11.7~13.3GHz)
1700
(f=9.5~11.7GHz)
1500
(f=11.7~13.3GHz)
41.5 VF
ES/EMM5079X 10~15.4 6 25 24 350 34 Chip
EMM5717X 12.75~24 3 18 20~24 180 - Chip
ES/EMM5717YF 12.75~24 3 17.5 21 180 - YF(SMT)
EMM5834X 12.7~27 6 26 23 370 32.5 Chip
FMM5063X 12.75~15.4 6 32 29 1000 38.5 Chip
EMM5075X 12.75~15.4 6 33 26 1300 43 Chip
EMM5075VU 12.75~15.4 6 33 23 1500 42 VU(SMT)
FMM5051VU 13.75~14.5 5 31.5 *2 31.5*3 800 - VU(SMT) High Power,
High Gain,
Low Distortion
Ku-Band VSAT
FMM5051VF 13.75~14.5 5 31.5*2 31.5*3 800 - VF
FMM5054VU 13.75~14.5 6 31 29 950 - VU(SMT)
FMM5054VF 13.75~14.5 7 33 31 1050 - VF
EMM5069ZB/001 13.75~14.5 5 32.5 29 1500 38 ZB(SMT)
FMM5059VU 13.75~14.5 6 33.5 27 1400 - VU(SMT)
FMM5059VF 13.75~14.5 7 35 28 1600 - VF
FMM5048GJ 13.75~14.5 10 36 26 2100 - GJ
FMM5804X 17.5~31.5 6 25
(f=17.5~30GHz)
23
(f=30~31.5GHz)
18 300 - Chip Wide Band,
High Gain,
Low Distortion
Radio Link,
VSAT, SAT Com.
ES/FMM5804YD * 17.5~30 6 24.5 17 350 - YD(SMT) Wide Band,
Radio Link, VSAT
FMM5823X 17.7~27 6 27
(f=17.7~19.7GHz)
29
(f=21.2~27GHz)
18 12
(f=17.7~19.7GHz)
15
(f=21.2~27GHz)
36.5 Chip Wide Band,
High Gain,
Low Distortion
Radio Link,
VSAT, SAT Com.
FMM5822X 17.5~20 6 32.5 21 1000 41 Chip High Power,
High Gain,
Low Distortion
Radio Link
FMM5822VU 17.7~19.7 6 32 21 1100 38.5 VU(SMT)
FMM5822GJ-1 17.7~19.7 6 31 20 1000 39.5 GJ
EMM5832VU 21.2~26.5 6 31 19 1000 36.5 VU(SMT) High Power,
High Gain
Radio Link,
Ka-Band VSAT
FMM5829X 21~27 6 31 22 1000 39 Chip
FMM5826X 27~30 6 28 20 500 37 Chip
ES/FMM5826YE * 29.5~30 5 27 19 450 - YE(SMT)
FMM5803X
27.5~31.5
6
30
14
(f=27.5~30GHz)
12
(f=30~31.5GHz)
700
- Chip
FMM5820X 29.5~30 7 35 23 2200 - Chip
FMM5820QH 29.5~30 7 36 22 2200 - QH
EMM5835X 37~40 6 27 20 600 36 Chip High Gain
Radio Link
FMM5715X 57~64 3 16 17 150 - Chip High Power
Radio Link,
Wireless LAN
*Under development *1:IDD@P1dB *2: Pout at Pin=3dBm *3: Linear Gain G.C.P. :Gain Compression Point

K~V Band : Low Noise Amplifier MMIC Specifications (Chip / Packaged)
Ta=+25°C
Part Number Frequency
Range
f
(GHz)
Drain-Source
Voltage
VDD
(V)
Noise Figure
NF
dB (Typ.)

Associated
Gain
Gas
dB (Typ.)

Output Power
at 1dB G.C.P.
P1dB
dBm (Typ.)
Outline /
Package
Code
Feature / Application
EMM5717X 12.75~24 3 1.5~2.5 21~25 18 Chip High Gain, Low Distortion
Radio Link,
VSAT, SAT Com.
ES/EMM5717YF 12.75~24 3 2.5 22 17.5 YF (SMT)
FMM5709X 17.5~32 3 2.5 23 12.5 Chip
ES/FMM5709YC 17.5~30 3 3.5 21 12.5 YC (SMT)
FMM5701X 18~28 5 1.5 13.5 7 Chip
FMM5703X 24~32 3 2 18 8 Chip
ES/FMM5703YC 24~30 3 2.5 16 8 YC (SMT)
FMM5702X 27~32 3 1.6 13 2 Chip
FMM5704X 36~40 3 2 18 8 Chip
ES/FMM5714X 37~42 3 3 20 20 Chip
FMM5716X 57~64 3 5 22 10 Chip High Gain
Wireless LAN, Radio Link
G.C.P. : Gain Compression Point

K~Ka Band : Converter MMIC Specifications (Chip / Packaged)
Ta=+25°C
Part Number RF Frequency Range
f
(GHz)
Drain-Source
Voltage
VDD
(V)
Conversion Gain
(dB)
Curret Consumption
(mA)
Outline / Package Code Feature
FMM5116X 20~32 5 -8 140 Chip with Doubler, Up Converter
ES/FMM5116YE 20~30 5 -11 160 YE (SMT) with Doubler, Up Converter
FMM5117X 20~32 5 -10 140 Chip with Doubler,
Down Converter
ES/FMM5117YE 20~30 5 -11 160 YE (SMT) with Doubler,
Down Converter
ES/FMM5129X 17~27 - -15 - Chip Up/Down Converler
ES/FMM5131X 27~34 - -15 - Chip Up/Down Converler
ES/FMM5123X 34~42 5 -15 80 Chip with Lo AMP, Up/Down Converter
ES/FMM5124X 34~42 - -15 - Chip Up/Down Converler
 

K~V Band : Multiplier MMIC Specifications (Chip)
Ta=+25°C
Part Number RF Frequency Range
f
(GHz)
Drain-Source
Voltage
VDD
(V)
Conversion Gain
(dB)
Curret Consumption
(mA)
Feature
FMM5118X 20~32 5 14 130 Doubler
ES/FMM5122X 12~18 5 0 25 Doubler
ES/FMM5120X 17~22 5 0 25 Doubler
FMM5125X 57~64 5 -5 100 Quadrapler
 
Ku~K Band : Oscillator MMIC Tc (op)=+25°C
Part Number Oscillation
Frequency
fosc
(GHz)
Drain-Source
Voltage
VDD
(V)
Output Power
Pout
dBm(Typ.)
Drain Current
ldd
mA (Typ.)
Phase Noise
at 100kHz offset Φn
dBc (Typ.)
2nd Harmonic
Rejection
RJ2nd
dBc (Typ.)
Package Code Feature / Application
EMM5206LP 15~24.5 4 5 20 -100 -40 LP High Power,
Low Power Consumption