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Copyright (c)2006 Eudyna Devices Inc. All right reserved.

Medium Power FETs

The ESL (GaAs MESFET) series are suitable for driver/low noise amplifiers in wireless infrastructures such as CDMA, GSM, PHS or other base station or repeater systems. Other uses include fixed/ mobile RF applications up to around 3.0GHz that covers FWA, WLAN or WLL.

Features

  • Ranging in Pout from 21dBm to 30dBm
  • Frequency: to 3.0GHz
  • Housed in a low-cost SOT-89 Package

ESL (GaAs MESFET) Series

Naming Rules

Specifications

Part Number RF Performance (@2.1GHz) [Typ] Vd
(V)		 lds
(mA)		 Rth
[Typ]
(°C/W)		 Features
P1dB
(dBm)		 lP3
(dBm)		 G1dB
(dB)		 NF
(dB)
ESL010SA* 21 38 12 2.5 5 80 100 Pb free SOT-89 package
ESL100SA* 30 50 12 3.0 10 220 100
  • G1dB: GL (Linear Gain) -1dB
  • *: Under development