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Copyright (c)2006 Eudyna Devices Inc. All right reserved.
 



Eudyna's unique Circuit with
Excellent GaAs MESFET Process

High sensitivity
Excellent equivalent input noise current density
Wide bandwidth
High gain
High transimpedance
Wide dynamic range

  Features
• Operation up to 1.25 Gbit/s
• +5.0V or +3.3V single power supply
(All of Preamplifiers up to 1.25 Gbit/s)

F0100109B F0100208B F0100408B-02 F0100406B
 
Specifications
Part Number Gain
Control
Supply
Voltage (V)
S21
(dB)
fop
(MHz)
Ztp
(kΩ)
lnoise
(pA/√Hz)
Dice Size
(µm)
Feature Application
F0100111B AGC 3.3 38 130 27 1.1 660/720 Excellent overload, High gain 156 Mbit/s opticai
transmission sysrems
F0100109B AGC 3.3 or 5.0 38 130 27 1.1 820/820 Excellent overload, High gain
F0100112B BBB 3.3 32 250 16 0.8 660/720 High sensitivity
F0100106B BBB 3.3 or 5.0 32 250 16 0.8 820/820 High sensitivity
F0100211B AGC 3.3 35 300 10 1.4 660/720 Good overload 622 Mbit/s opticai
transmission sysrems
F0100209B AGC 3.3 or 5.0 35 300 10 1.4 820/820 Good overload
F0100212B BBB 3.3 29 300 7 1.3 660/720 High sensitivity
F0100208B BBB 3.3 or 5.0 29 300 7 1.3 820/820 High sensitivity
F0100404B N/A 3.3 or 5.0 16 1,900 0.6 9.7 820/820 Zt constant 1.25 Gbit/s opticai
transmission sysrems
F0100406B AGC 3.3 30 1,000 4 3.5 660/720 Hig hsensitivity Receivers for GE-PON OLT
F0100408B BBB 3.3 21 1,550 1 7.0 660/720 For burs tmode
F0100408B-02 BBB 3.3 21 1,550 1 7.0 660/720 For burs tmode
Operation chip backside temp:
-40°C to 95°C
Receivers for
GE-PON 1.25 Gbits/s OLT
BBB(Bit by Bit)means transimpedance for each bit is controlled optimum according to optical signal power of each bit.