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Copyright (c)2006 Eudyna Devices Inc. All right reserved.
 

 

Eudyna Foundry Service is providing a wide lineup of state-of-the-art devices corresponding to various customer demands.


Features
• State-of-the-art Devices
InP HBT, P-HEMT, GaAs MESFET
• Wide Lineup
High Power, Low Noise, Analog/Digital ICs
• High Reliability and High Uniformity
For Microwave Applications

Wafer Process Technology
• Device Technology
•InP HBT: fmax = 200GHz
• E-mode power P-HEMT: BVgdo = 15V
• Low noise P-HEMT: NF = 0.4dB @12GHz
• D/E mode I.I. MESFET: Ft = 90GHz
• Wiring Process Technology
• Air bridge
• Polyimide inter-layer film
• Backside Process Technology
• Dry etching via hole
• Thin wafer thickness (28μm)
• Ultra low thermal resistance

 

 

 For Fiber Optic Applications

   


InP HBT		 P-HEMT
Process ESH-1 EDH-1 EDH-2
Device lnP/lnGaAs SHBT lnP/lnGaAs DHBT lnP/lnGaAs
DHBT
Emitter Size (µm2) 1.1x5.6 1.1x5.6 1.0x5.6
Current Gain
@1mA/µm2		 45 50 45
Ft (GHz) 130 120 150
Fmax (GHz) 170 160 200
BVceo (V) 3 10 8
Resistor
(Ω/sq.)		 TFR
50 or 125		 TFR
50 or 125		 TFR
50 or 125
Capacitor (fF/µm2) MIM: 0.16
& 0.33		 MIM: 0.16
& 0.33		 MIM: 0.16
& 0.33
Wiring Metal 3 Layers 3 Layers 3 Layers
lnsulator SiON SiON SiON
Air-Bridge Support Support Support
Die Thickness
(µm)		 600/300/150
100 for Via		 600/300/150
100 for Via		 600/300/150
100 for Via
Chip Separation Dicing Dicing Dicing
Substrate Via Support Support Support
Substrate 3" or 4 " lnP 3" lnP 3" lnP
Application,
Features		 High Uniformity
High Reproducibility
Excellent Reliability		 High Uniformity
High Reproducibility
Excellent Reliability		 High Uniformity
High Reproducibility
Excellent Reliability
Phase Production Production Production
Process H7P H7 H8 H9
Device P-HEMT
E-Mode		 P-HEMT
D-Mode		 P-HEMT
D-Mode		 P-HEMT
D-Mode
Channel Epitaxial Epitaxial Epitaxial Epitaxial
Gate Length
(µm)		 0.4 0.25 0.15
EB Lithography		 0.15
EB Lithography
lds
(mA/mm)		 150
@Vgs = 0.6V		 130 180 340
Vth (V) 0.08 -0.65 -0.57 -0.95
Gm (mS/mm) 450 310 395 500
BVgdo/BVgso (V) -15/-15 -15/-15 -9.5/-9.5 -9/-8
Ft (GHz) 33 49 88 84
Resistor
(Ω/sq.)		 Epitaxial/recess
125/0.63k		 Epitaxial
110		 Epitaxial
120		 Epitaxial
110
Capacitor (fF/µm2) MIM: 0.42 MIM: 0.3 MIM: 0.3 MIM: 0.3
Wiring Metal
(local+global)		 2 Layers
(1+1)		 2 Layers
(1+1)		 2 Layers
(1+1)		 2 Layers
(1+1)
lnsulator Polyimide Air Bridge Air Bridge Air Bridge
Die Thickness (µm) 28 28 75 28
Chip Separation Etching Etching Etching
 Etching
Substrate Via Support Support Support Support
Substrate 4" GaAs 4" GaAs 4" GaAs 4" GaAs
Application,
Features		 Power MMIC
High Power
Positive Bias
Low Price		 Power MMIC
High Frequency
High Power		 mm-Wave
MMIC
High Frequency
Low Noise		 Analog/Digital
SSl
HighFrequency
High Gain
Phase Production Production Production Production

GaAs MESFET		  
Process SRD-800/500DD SRD-501ED SRD-150ED SRD-150EDa SRD-303ED M3
Device MESFET
D-Mode		 MESFET
D/E-Mode		 MESFET
D/E-Mode		 MESFET
D/E-Mode		 MESFET
D/E-Mode		 MESFET
D/E-Mode
Channel I.I. I.I. I.I. I.I. I.I. I.I.
Gate Length
(µm)		 0.8
0.5		 E: 0.5
D: 0.8		 0.15
Optical		 0.15
Optical		 E: 0.3
D: 0.8		 0.6 or 1.2
lds
(mA/mm)		 185@Vgs = 0.6V
45@Vgs = 0V		 95@Vgs = 0.6V E: 120@Vgs = 0.6V
D: 140@Vgs = 0V		 E: 100@Vgs = 0 .6V
D: 120@Vgs = 0V		 E: 125@Vgs = 0.6V
D: 45@Vgs = 0V		 135: 0.6D
120: 1.2D
Vth
(V)		 -0.4
-1.0		 E: 0.05
D: -0.4		 E: 0
D: -0.4		 E: 0
D: -0.4		 E: 0.05
D: -0.45		 -1.4/+0.1: 0.6D/E
-1.3/+0.2: 1.2D/E
Gm
(mS/mm)		 270@Vgs = 0.6V
190@Vgs = 0V		 320 E: 360@Vgs = 0.6V
D: 360@Vgs = 0V		 E: 340@Vgs = 0.6V
D: 340@Vgs = 0V		 E: 360@Vgs = 0.6V
D: 200@Vgs = 0V		 130/125
0.6/1.2D
BVgdo/BVgso (V) -8/-8 -8/-8 -10/-10 -12/-10 E: -6.5/-6.5
D: -5.5/-5.5		 -15/-15
Ft ( GHz) 26@0.5µm 30 for E 90 75 50 for E 25/12.4: 0.6/1.2D
Resistor
(Ω/sq.)		 I.I.
500		 I.I.
500		 I.I.
700		 I.I.
700		 I.I.
500		 I.I. n+/I.I. n-/metal
365/1.26k/0.39
Capacitor (fF/µm2) MIM: 0.1 MIM: 0.1 MIM: 0.1 MIM: 0.1 MIM: 0.1 MIM: 0.42
Wiring Metal (local+global) 2 Layers 2 Layers 2 or 3 Layers 2 or 3 Layers 2 Layers 2 Layers (0+2)
lnsulator SiON SiON SiON SiON SiON Polyimide
Die Thickness (µm) 290 290 lnitial-15um lnitial-15um 290 250
Chip Separation Dicing Dicing Dicing Dicing Dicing Dicing
Substrate Via - - - - - -
Substrate 4" GaAs 4" GaAs 4" GaAs 4" GaAs 4" GaAs 4" GaAs
Application,
Features		 High Uniformity
δVth<20mV
Self-aligned LDD		 High Uniformity
δVth<20mV
Self-aligned LDD		 δVth<50mV
Self-aligned LDD		 δVth<50mV
Asymmetric
Self-aligned LDD		 High Uniformity
δVth<20mV
Self-aligned LDD		 General MMIC
D/E-mode
Low Price
Phase ES Production Production Production Production Production